The Effect of the Fermi Energy on the I-V and G-V Characteristics of Molecular Wire

Aissa Boudjella

doi:10.4028/www.scientific.net/AMM.307.399

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vol. 307The Effect of the Fermi Energy on the I-V and G-V...

The Effect of the Fermi Energy on the I-V and G-V Characteristics of Molecular Wire

Abstract:

The effect of the Fermi level position Ef on the electron transport of different molecular assembly system (MAS) conformations is investigated. The model contains up to six 1,4-dithiolbenzene (DTB) molecular under fixed intermolecular distance d=3.9 Å. The simulation results show that with Ef near the HOMO-LUMO mid gap, the curves show only 3 modes of operation: 1) the conductance gap region (CG); 2) the linear region; and 3) the saturation region. More than 3 different regions of operation were observed when Ef becomes close to LUMO. The threshold voltage Vth, the conductance gap and VIP decrease, while the conductance peak increases. More importantly, in addition to the effect of physical parameter N, which involves the -orbital interactions, enhancing the -orbital interactions strength by reducing HLG, the Fermi level position is another important factor in determining the current flow.

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Periodical:

Applied Mechanics and Materials (Volume 307)

Pages:

399-403

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.307.399

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Online since:

February 2013

Authors:

Aissa Boudjella

Keywords:

Energy Gap, Fermi, HOMO, LUMO, Molecular Assembly System

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References

[1] Aissa Boudjella et al. Japanese J. of Appl. Phys, 47(2008)No. 6, 4969-4974.

Google Scholar

[2] Aissa Boudjella et al. American Institute of Physics vol. 1136 pp.489-493.

Google Scholar

[3] Christopher J. Cramer: Essential of computational chemistry: theories (Oxford University Press, U.S. A, 1994).

Google Scholar

[4] Magnus Ferdows Zahid and Supriyo Data. Resistance of a Molecule. Nanoscience, Eng. and TecH. Handbook" edited by W. Goddard, D. Brenner, S. Lyshevski and Gerald afrate, published by CRC Press.

Google Scholar

[5] F. Zahid, M. Paulsson, and S. Datta. In semiconductors and Organic Nano-tecniques. edited by H. Morkoc (Academic Press, new York, 2003).

Google Scholar

[6] www. nanohub. org.

Google Scholar

[7] Aissa Boudjella et al. American Institute of Physics vol. 1136, pp.489-493.

Google Scholar