Analysis of Acoustic Wave Property on AlN/Diamond/Si Thin Film Substrates

Abstract:

Multi-layer piezoelectric thin-film substrates which may present properties of good temperature characteristic, high reflectivity, high coupling coefficient, high phase velocity, and integrated with semiconductor, have the potential to replace single crystal piezoelectric substrates used on acoustic devices. The properties of piezoelectric thin-film substrates are determined by the structures of the substrates, the piezoelectric material, the metal film thickness and etc. Usually the acoustic wave parameters of the substrates are not readily obtainable from literature. In this paper, the acoustic wave properties of thin film substrate of AlN/Diamond/Silicon were analyzed using finite element method. The research data of this paper would be applied to design high frequency RF acoustic devices such as resonators and filters.

• Periodical: Applied Mechanics and Materials (Volume 312)
• Pages: 363-367
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.312.363
• Online since: February 2013
• Authors: Shuming T. Wang, Shen Whan Chen, Bing Yi Chen, Chih Yuan Cheng, Rey Chue Hwang, Mei Hui Chung
• Keywords: AlN/Diamond/Si, Piezoelectric Thin-Film, Surface Acoustic Wave (SAW)

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