Research and Validation of ICs' TDDB Physics-of-Failure Model

Abstract:

In the new era, the reliability technology based on physics of failure (PoF) is playing an increasingly important role in development of electronic equipment. PoF models of electronic products, as the foundation and core of this advanced technology, are the main point of engineering application. With continual scaling of VLSI in electronic equipment, the electric field across gate oxide becomes higher and higher and affects the reliability of semiconductor device greatly. In this paper, TDDB failure mechanism and Physics-of-Failure model was researched firstly. Then the test sample was designed and processed, and the test verification program for TDDB Physics-of-Failure model was carried out to develop the test verification, collect and process test data. Through analyzing test data, the parameters of TDDB model were determined and modified to ensure the Physics-of-Failure model precision and the model could be used in engineering. Based on modified model, the reliability of integrated circuits can be evaluated at designing stage. And the inherent reliability of integrated circuits in electronic equipment could be improved by design optimization to reduce the risk in the process of using.

• Periodical: Applied Mechanics and Materials (Volumes 313-314)
• Pages: 281-286
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.313-314.281
• Online since: March 2013
• Authors: Ming Xu, Feng Ming Lu, Chen Hui Zeng
• Keywords: Physics-of-Failure Model, TDDB Failure Mechanism, Test Verification, Ultra-Thin Gate Oxide

References

[1] William McMahon, Amr Haggag, and Karl Hess, Reliability Scaling Issues for Nanoscale Devices, IEEE Transactions on Nanotechnology, Mar.2003, Vol.2, No.1, 33-38

DOI: 10.1109/tnano.2003.808515

[2] Abdullah M Yassine, H.E. Nariman, Michael McBride and KolaR.Olasupo, Time Dependent Breakdown of Ultrathin Gate Oxide，IEEE Transactions on Electron Devices, Jul.2000, V01.47, No.7, 1416-1420

DOI: 10.1109/16.848285

[3] Rainer Duschl and Rolf-Peter Vollertsen, Voltage Acceleration of Oxide Breakdown in the sub-10nm Fowler-Nordheim and Direct Tunneling Regime，2005 Iirw Final Report, 2005, 44-48

DOI: 10.1109/irws.2005.1609560

[4] D J Dumin, R S Ccott, R Subramoniam., "A model relating wearout induced physical changes in thin oxides to the statistical description of breakdown", IEEE IRPS, 1993, 302-309

DOI: 10.1109/relphy.1993.283286

[5] I C Chen, C Hu, "Oxide breakdown dependence on thickness and hole current enhanced reliability of ultra thin oxides", IEEE International Electron Device Meeting, 1986, 660-665

DOI: 10.1109/iedm.1986.191278

[6] J W McPherson, "Determination of the nature of molecular bonding in silica from time-dependent dielectric breakdown data", Journal of Applied Physics, 2004, 8101-8109

DOI: 10.1063/1.1728288

[7] Yang J.Y.C., Cheng L.L., Chan Y.H.,et al., "The correlation of interface defect density and power-law exponent factor on ultra-thin gate dielectric reliability", IEEE International Integrated Reliability Workshop Final Report , 2006, 3-3

DOI: 10.1109/irws.2006.305240

[8] D J Dimaria. "Impact ionization, trap generation, degradation and breakdown in silicon dioxide films on silicon", Journal of Applied Physics, 1993, 3367-3384

DOI: 10.1063/1.352936

[9] J J Tzon. "Temperature dependence of charge generation and breakdown in SiO2", IEEE Electron Devices Letters, 1986, 446-449

[10] J W McPherson, "Underlying physics of the thermochemical E model in describing low-field time-dependent dielectric breakdown in SiO2 thin films"，Journal of Applied Physics, 1998, 1513-1523

DOI: 10.1063/1.368217

[11] E Harari, et al., "Dielectric breakdown in electrically stressed thin films of thermal SiO2", Journal of Applied Physics, 1978, 2478-2489

DOI: 10.1063/1.325096