Study of CdxZn1-xTe Thin Films with Cu Layers

Shuo Jin; Li Li Wu; Wen Wu Wang; Guang Gen Zeng; Liang Huan Feng; Jing Quan Zhang; Wei Li; Bing Li

doi:10.4028/www.scientific.net/AMM.329.114

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vol. 329Study of CdxZn1-xTe Thin Films with Cu Layers

Study of Cd_xZn_1-xTe Thin Films with Cu Layers

Abstract:

Cd_xZn_1-xTe is a promising material for tandem solar cells with a continuously adjustable band gap from 1.45eV to 2.26eV, but p-type Cd_xZn_1-xTe with higher carrier density is rarely reported. Cd_xZn_1-xTe thin films with Cu layers were deposited by vacuum co-evaporation in sequence and annealed in low vacuum in this paper. The compositional, structural, morphological, electrical and optical properties were studied. The results show that zinc-blended Cd_0.4Zn_0.6Te films with (111) preferred orientation were fabricated. Conduction type of annealed Cd_xZn_1-xTe films with Cu layers will change from intrinsic to p-type. Cu doped Cd_xZn_1-xTe thin films with carrier density of 10¹⁸~10¹⁹cm^-3and the band-gap of 1.89~1.93eV can be obtained. It demonstrates that Cu is an effective p-type dopant for Cd_xZn_1-xTe thin films.

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Periodical:

Applied Mechanics and Materials (Volume 329)

Pages:

114-117

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.329.114

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Online since:

June 2013

Authors:

Shuo Jin, Li Li Wu, Wen Wu Wang, Guang Gen Zeng, Liang Huan Feng, Jing Quan Zhang, Wei Li, Bing Li

Keywords:

Cd_xZn_1-xTe Thin Films, Copper Doping, Tandem Solar Cells

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