Quantum Dot Array LED Research with ZnO as an Electron Transport Layer

Jia Zhao; Xiao Yu Zhang; Yu Zhang; Yi Feng; Tie Qiang Zhang; Yi Ding Wang

doi:10.4028/www.scientific.net/AMM.333-335.1895

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 333-335Quantum Dot Array LED Research with ZnO as an...

Quantum Dot Array LED Research with ZnO as an Electron Transport Layer

Abstract:

As a new light-emitting material, quantum dot having the advantages of other materials that can not be replaced. It is not only the fluorescence quantum yield, and light stability. Therefore, we use CdSe core-shell structure of the quantum dot LED devices as the electron-hole recombination layer. In this paper, we synthesized emission peak is located at 588nm CdSe core-shell quantum dots, and made array display LED devices with ZnO as the electron transport layer.

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Periodical:

Applied Mechanics and Materials (Volumes 333-335)

Pages:

1895-1898

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.333-335.1895

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Online since:

July 2013

Authors:

Jia Zhao, Xiao Yu Zhang, Yu Zhang, Yi Feng, Tie Qiang Zhang, Yi Ding Wang

Keywords:

Array, CdSe, Core-Shell, LED

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References

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