Study of Deformation in the Active Region of GaAs/GaAlAs Laser Diodes

Jin Ling Wu; Xin Nian Wang; Lan Dang Yuan

doi:10.4028/www.scientific.net/AMM.333-335.332

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 333-335Study of Deformation in the Active Region of...

Study of Deformation in the Active Region of GaAs/GaAlAs Laser Diodes

Abstract:

The paper presents an investigation of deformation in the active region of GaAs laser diodes under operating conditions.Since the properties of bulk material and manufactured diode are not identical,a study of the spectral splitting and polarisation changes caused by mechanical stress in the diode is made.These results are used to calibrate instruments for a study of the deformation due to thermal stress in the diode under operating conditions.This thermal stress can exceed the shear stress required for dislocation motion in the active region of the diode.

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Periodical:

Applied Mechanics and Materials (Volumes 333-335)

Pages:

332-335

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.333-335.332

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Online since:

July 2013

Authors:

Jin Ling Wu, Xin Nian Wang, Lan Dang Yuan

Keywords:

Laser Diodes, Mechanical Stress, Polarisation Direction, Spectral Splitting

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