RETRACTED: Key Factors for Metal Organic Chemical Vapor Deposition of InGaN Films with High InN Molar Fraction

Yu Huai Liu; Fang Wang; Wei Zhang; Shou Yi Yang; Yuan Tao Zhang; Ryuji Katayama; Takashi Matsuoka

doi:10.4028/www.scientific.net/AMM.341-342.204

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RETRACTED: Key Factors for Metal Organic Chemical Vapor Deposition of InGaN Films with High InN Molar Fraction
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Effects of Cooling Rate on Microstructure and Properties of Nb-Ti Micro-Alloyed Steel
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Stable Reduced Graphene Oxide Suspension Modified by PAMAM
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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 341-342RETRACTED: Key Factors for Metal Organic Chemical...

RETRACTED: Key Factors for Metal Organic Chemical Vapor Deposition of InGaN Films with High InN Molar Fraction

Retracted:

This paper has been retracted due to author's misconduct following corresponding author's request.

1. The data in the conference proceeding paper were taken without the permission laboratory.

2. The interpretation of the data in the conference proceeding paper was incorrect.

3. Part of the data were already published in other papers, leading to the duplicated submission.

4. Part of the authors in the conference proceeding papers had no relationship with the data.

Abstract:

Retracted paper: InGaN with high InN molar fraction is a promising material for next generation optoelectronic devices and electronic devices such as solar cells, laser diodes for communications, and high mobility transistors and so on. However, the growth of InGaN with high InN molar fraction is still a tough challenge for metal organic chemical vapor deposition (MOCVD). This paper provides experimental clues for the key factors, including the influences of the growth temperature, the V/III ratio, the group III supply ratio, and the reactor pressure. In addition, the effectiveness of the pressurized MOCVD growth of the InGaN with high InN molar fraction will be testified.

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Periodical:

Applied Mechanics and Materials (Volumes 341-342)

Pages:

204-207

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.341-342.204

Online since:

July 2013

Authors:

Yu Huai Liu, Fang Wang, Wei Zhang, Shou Yi Yang, Yuan Tao Zhang, Ryuji Katayama, Takashi Matsuoka

Keywords:

InGaN, InN Molar Fraction, MOCVD, Reactor Pressure, V/III Ratio

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Creative Commons CC BY 4.0

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