4.5kV SiC JBS Diodes

Yong Hong Tao; Run Hua Huang; Gang Chen; Song Bai; Yun Li

doi:10.4028/www.scientific.net/AMM.347-350.1506

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 347-3504.5kV SiC JBS Diodes

4.5kV SiC JBS Diodes

Abstract:

High voltage 4H-SiC junction barrier schottky (JBS) diode with breakdown voltage higher than 4.5 kV has been fabricated. The doping level and thickness of the N-type drift layer and the device structure have been performed by numerical simulations. The thickness of the device epilayer is 50 μm, and the doping concentration is 1.2×1015 cm3. A floating guard rings edge termination has been used to improve the effectiveness of the edge termination technique. The diodes can block a reverse voltage of at least 4.5 kV, and the on-state current density was 80 A/cm2 at VF =4 V.

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Periodical:

Applied Mechanics and Materials (Volumes 347-350)

Pages:

1506-1509

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.347-350.1506

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Online since:

August 2013

Authors:

Yong Hong Tao, Run Hua Huang, Gang Chen, Song Bai, Yun Li

Keywords:

Floating Guard Rings, Junction Barrier Schottky (JBS) Diode

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References

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