High Breakdown Voltage GaN HEMT Device Fabricated on Self-Standing GaN Substrate

Abstract:

In this letter, a high breakdown voltage GaN HEMT device fabricated on semi-insulating self-standing GaN substrate is presented. High quality AlGaN/GaN epilayer was grown on self-standing GaN substrate by metal organic chemical vapor deposition. A 0.8μm gate length GaN HEMT device was fabricated with oxygen plasma treatment. By using oxygen plasma treatment, gate forward working voltage is increased, and a breakdown voltage of more than 170V is demonstrated. The measured maximum drain current of the device is larger than 700 mA/mm at 4V gate bias voltage. The maximum transconductance of the device is 162 mS/mm. In addition, high frequency performance of the GaN HEMT device is also obtained. The current gain cutoff frequency and power gain cutoff frequency are 19.7 GHz and 32.8 GHz, respectively. A high f_T-L_G product of 15.76 GHzμm indicating that homoepitaxy technology is helpful to improve the frequency performance of the device.

• Periodical: Applied Mechanics and Materials (Volumes 347-350)
• Pages: 1535-1539
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.347-350.1535
• Online since: August 2013
• Authors: Jian Jun Zhou, Liang Li, Hai Yan Lu, Ceng Kong, Yue Chan Kong, Tang Sheng Chen
• Keywords: Gan HEMT, High Breakdown Voltage, Self-Standing Substrate

References

[1] Umesh K Mishra, Parikh Primit, Yi-Feng Wu, AlGaN-GaN HEMTs: an overview of device operation and application [J], Proceedings of the IEEE. 2002 90 (6) 1022–1031.

DOI: 10.1109/jproc.2002.1021567

[2] Wakejima A, Matsunaga K, Okamoto Y, Ando Y, Nakayama T and Miyamoto H, 370 Woutput power GaN-FET amplifier for W-CDMA cellular base stations [J], Electron. Lett. 2005: 41(25): 1371–1372.

DOI: 10.1049/el:20053407

[3] Ui N, Sano H and Sano S, A 80W 2-stage GaN HEMT Doherty Amplifier with 50 dBc ACLR, 42% drain efficiency 32dB Gain with DPD for W-CDMA base station [C], IEEE MTT-S International Microwave Symposium, 2007, 1259–1262.

DOI: 10.1109/mwsym.2007.380421

[4] Ciccognani W, Limiti E, Longhi P E, Mitrano C, Nanni A, Peroni M, An Ultra-Broadband Robust LNA for Defence Applications in AlGaN/GaN Technology, IMS 2010, 493-496.

DOI: 10.1109/mwsym.2010.5518253

[5] Eldad Bahat-Treidel, Frank Brunner, Oliver Hilt, Eunjung Cho, Joachim Würfl, and Günther Tränkle, AlGaN/GaN/GaN: C Back-Barrier HFETs With Breakdown Voltage of Over 1 kV and Low RON × A [J], IEEE Transactions on Electron Devices. 2010: 57 (11): 3050-3058.

DOI: 10.1109/ted.2010.2069566

[6] Hsu J W P, Manfra M J, Molnar R J, Heying B, and Speck J S, Direct imaging of reverse-bias leakage through pure screw dislocations in GaN films grown by molecular beam epitaxy on GaN templates [J], Appl. Phys. Lett. 2002(81) 79–81.

DOI: 10.1063/1.1490147

[7] Hsu C Y, Lan W H, and Wu Y C S, Effect of thermal annealing of Ni/Au ohmic contact on the leakage current of GaN based light emitting diodes [J], Appl. Phys. Lett. 2003( 83) 2447–2449.

DOI: 10.1063/1.1601306

[8] Motokia K, Okahisaa T, Nakahataa S, Matsumotoa N, Kimurab H, Kasaib H, Takemotob K, Uematsua K, Uenoa M, Kumagaic Y, Koukituc A, Sekic H, Growth and characterization of freestanding GaN substrates [J], J. Cryst. Growth. 2002 (237) 912–921.

[9] Jianjun Zhou, Xun Dong, Ceng Kong, Yuechan Kong, Chunjiang Ren, Zhonghui Li, Tangsheng Chen, Chen Chen and Bing Zhang. Developing the Ka-band GaN Power HEMT devices [C], 5th Global Symposium on Millimeter Waves, (2012).

DOI: 10.1109/gsmm.2012.6314414

[10] Leach J H, Wu M, Ni X, Li X, Xie J, ÖzgürÜ, Morkoç H, Paskova T, Preble E, Evans K R, and Chang-Zhi Lu, Carrier velocity in InAlN/AlN/GaN heterostructure field effect transistors on Fe-doped bulk GaN substrates [J], APPLIED PHYSICS LETTERS. 2010 (96) 102109.

DOI: 10.1063/1.3358192