Phase Transition Behaviors and Thermal Conductivity of Ge Doped Sb2Te Thin Films for Phase Change Random Access Memory

Su Yuan Bai; Zhe Nan Tang; Zheng Xing Huang; Yi Feng Gu

doi:10.4028/www.scientific.net/AMM.367.26

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vol. 367Phase Transition Behaviors and Thermal...

Phase Transition Behaviors and Thermal Conductivity of Ge Doped Sb₂Te Thin Films for Phase Change Random Access Memory

Abstract:

The Ge doped Sb₂Te thin films (Ge₂Sb₂Te₅, Ge_0.15Sb₂Te and Ge_0.61Sb₂Te) were deposited by magnetron co-sputtering using Ge and Sb₂Te targets. Ge doping effect on the phase transition behaviors and thermal conductivity of the composite films was investigated. Ge_0.61Sb₂Te thin films have higher crystallization temperature (~200°C), larger crystallization activation energy (~3.28 eV) , better data retention (~120.8 °Cfor 10 years) and lower thermal conductivity (~0.23 W/mK). Ge_0.61Sb₂Te thin films is considered to be a promising storage medium for phase change random access memory due to its better thermal stability and lower power consumption.

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Periodical:

Applied Mechanics and Materials (Volume 367)

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26-31

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.367.26

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Online since:

August 2013

Authors:

Su Yuan Bai, Zhe Nan Tang, Zheng Xing Huang, Yi Feng Gu

Keywords:

Ge Doped Sb₂Te, PCRAM, Thermal Conductivity (TC)

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