Mechanisms of Forward Current and Reverse Leakage Current in GaN-Based Blue Light Emitting Diodes

Ren Jian; Li Sha  Li; Da Wei Yan; Xiao Feng  Gu

doi:10.4028/www.scientific.net/AMM.380-384.3035

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 380-384Mechanisms of Forward Current and Reverse Leakage...

Mechanisms of Forward Current and Reverse Leakage Current in GaN-Based Blue Light Emitting Diodes

Abstract:

By measuring the current-voltage (I-V) characteristics in the temperature range of 100 K to 300 K, mechanisms of the forward tunneling current and the reverse leakage current of GaN-based blue light emitting diodes are analyzed. For the forward current, both the temperature-independent current slope and an ideality factor larger than 2 are typical features of the defect-assisted tunneling mechanism. For the reverse leakage current, the linear relationship between I and (V+V_bi)^1/2 indicates a hopping conduction mechanism at low bias, while the power law I-V relationship suggests that the space charge limited current dominates the reverse leakage current at high bias.

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Periodical:

Applied Mechanics and Materials (Volumes 380-384)

Pages:

3035-3038

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.380-384.3035

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Online since:

August 2013

Authors:

Ren Jian, Li Sha Li, Da Wei Yan, Xiao Feng Gu

Keywords:

Forward Tunneling Current, Gallium Nitride (GaN), Light Emitting Diode (LED), Reverse Leakage Current

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References

[1] M. Meneghini, M. Dal Lago, and L. Rodighierol. Reliability issues in GaN-based light-emitting diodes: effect of dc and PWM stress[J]. Microelectronics Reliability, 2012 52(8) 1621-1626.

DOI: 10.1016/j.microrel.2011.10.012

Google Scholar

[2] J. W. P. Hsu, M. J. Manfra, and D. V. Lang. Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottky diodes[J]. Appl. Phys. Lett., 2001 78(12) 1685-1687.

DOI: 10.1063/1.1356450

Google Scholar

[3] D. S. Li, H. Chen, H. B. Yu. Dependence of leakage current on dislocations in GaN-based light-emitting diodes[J]. J. Appl. Phys., 2004 96(2) 1111-1114.

DOI: 10.1063/1.1763234

Google Scholar

[4] P. Perlin, M. Osiński, and P. G. Eliseev. Low-temperature study of current and electroluminescence in InGaN/AlGaN/GaN double-heterostructure blue light-emitting diodes[J]. Appl. Phys. Lett., 1996 69(12) 1680-1682.

DOI: 10.1063/1.117026

Google Scholar

[5] X. A. Cao, E. B. Stokes, P. Sandvik, S. F. LeBoeuf, and J. Kretchmer. Diffusion and tunneling currents in GaN/InGaN multiple quantum well light-emitting diodes[J]. IEEE Electron Device Letter, 2002 23(9) 535-537.

DOI: 10.1109/led.2002.802601

Google Scholar

[6] M. Pollak and I. Riess. A percolation treatment of high hopping transport[J]. J. Phys. C: Solid State Phys., 1976 9 2339-2352.

DOI: 10.1088/0022-3719/9/12/017

Google Scholar

[7] A. Rose. Space charge limited in solids[J]. Phys. Rev., 1955 97(6) 1538-1544.

Google Scholar