Y1Ba2Cu3O7-x semiconducting thin films with different buffer have been manufactured by direct current magnetic sputtering and annealing method, and their infrared thermal radialization respond have been studied. The microstructure of Y1Ba2Cu3O7-x film is analyzed by XRD and Raman spectrum. The electronic resistance temperature coefficient value and hall effect of Y1Ba2Cu3O7-x film are measured. The results show that the uniformity of the semiconducting Y1Ba2Cu3O7-x thin film which have buffer layer is better and their Signal-to-Noise is higher. It is believed that the Y1Ba2Cu3O7-x not only have good speciality for its thermal radiation respond in infrared band but also have good performance in sub-millimeter band. It will act as new sensor elements of infrared bolometer working at room temperature.