The Study on the Infrared Thermal Radiation Response of Y₁Ba₂Cu₃O_7-X Semiconducting Film

Abstract:

Y1Ba2Cu3O7-x semiconducting thin films with different buffer have been manufactured by direct current magnetic sputtering and annealing method, and their infrared thermal radialization respond have been studied. The microstructure of Y1Ba2Cu3O7-x film is analyzed by XRD and Raman spectrum. The electronic resistance temperature coefficient value and hall effect of Y1Ba2Cu3O7-x film are measured. The results show that the uniformity of the semiconducting Y1Ba2Cu3O7-x thin film which have buffer layer is better and their Signal-to-Noise is higher. It is believed that the Y1Ba2Cu3O7-x not only have good speciality for its thermal radiation respond in infrared band but also have good performance in sub-millimeter band. It will act as new sensor elements of infrared bolometer working at room temperature.

• Periodical: Applied Mechanics and Materials (Volumes 40-41)
• Pages: 830-834
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.40-41.830
• Online since: November 2010
• Authors: Sun De
• Keywords: Semiconductor Film, Thermal Radiation, Y₁Ba₂Cu₃O_7-X

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