Bipolar Resistive Switching Characteristics of CeO2 Film Based ReRAM

Yong Dan Zhu; Hong Hua Liao; Jian Jun Tan

doi:10.4028/www.scientific.net/AMM.401-403.586

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 401-403Bipolar Resistive Switching Characteristics of...

Bipolar Resistive Switching Characteristics of CeO₂ Film Based ReRAM

Abstract:

This paper reports the resistive switching characteristics and mechanism of CeO₂ based ReRAM. The CeO₂ films were deposited on Nb:SrTiO₃ substrates under different oxygen pressures (0.01Pa and 10Pa) to obtain different concentrations of oxygen vacancies in the films. The results show that the resistive switching properties become more pronounced with more oxygen vacancies in the CeO₂ films. The device with 0.01Pa oxygen pressures exhibits high resistive switching ratio of 2×10³ and multilevel memories. Furthermore, a model based on the modification of the interface property induced by the oxygen vacancies in these structures is proposed to elucidate the underlying physical origins. Key words: resistive switching, oxygen vacancies, carrier injection, multilevel memories.

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Periodical:

Applied Mechanics and Materials (Volumes 401-403)

Pages:

586-589

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.401-403.586

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Online since:

September 2013

Authors:

Yong Dan Zhu, Hong Hua Liao, Jian Jun Tan

Keywords:

Carrier Injection, Multi-Level Memory, Oxygen Vacancies, Resistive Switching

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