High Temperature Annealing Amorphous Hydrogenated SiC Films for the Application as Window Layers in Si-Based Solar Cell

Abstract:

Amorphous hydrogenated silicon carbide (a-Si_1-xC_x:H) films were deposited by plasma enhanced chemical vapor deposition and subsequently annealed in N₂ atmosphere at 1100 °C. The effects of high temperature annealing on the film’s optical and structural properties were systematically analyzed. It was noted that after high temperature annealing, amount of Si-C bonds increased significantly and SiC nanocrystalline was formed on the surface of the film, which resulted in an increasing refractive index in wavelength range of visible light, a decreasing absorbance index (wavelength<433.5 nm) and an increasing optical bandgap of the film. The changes of the optical properties illustrated that the performance of Si-based solar cell with a-Si_1-xC_x:H window layer could be improved by high temperature annealing.

• Periodical: Applied Mechanics and Materials (Volumes 401-403)
• Pages: 631-634
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.401-403.631
• Online since: September 2013
• Authors: Rong Dun Hong, Xia Ping Chen, Qian Huang, Yan Nan Xie, Shao Xiong Wu, Zi Feng Zhang, Zhengyun Wu
• Keywords: a-Si1-xCx:H, Chemical Vapor Deposition (CVD), Nanocrystalline, Optical Property

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