The Equivalent Circuit Model of Floating-Gate Single-Electron Memorizer

Liang Gong; Rui Ming Li; Qi Xiong; Shao Hua Zhou

doi:10.4028/www.scientific.net/AMM.416-417.1721

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 416-417The Equivalent Circuit Model of Floating-Gate...

The Equivalent Circuit Model of Floating-Gate Single-Electron Memorizer

Abstract:

Based on the introduction of floating-gate silicon quantum dot single-electron memorizers structure and working principle, this paper builds corresponding lumping current and capacitance model to calculate the current with memory in the circumstance of linearity, saturation and sub-threshold. Taking advantage of the single-electron devices Threshold Voltage Shift educes different storage condition of nanostorage with different threshold voltage. The simulation shows, this model can precisely simulate memorys read and write state.

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Periodical:

Applied Mechanics and Materials (Volumes 416-417)

Pages:

1721-1725

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.416-417.1721

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Online since:

September 2013

Authors:

Liang Gong, Rui Ming Li, Qi Xiong, Shao Hua Zhou

Keywords:

Equivalent Circuit, Floating Gate Silicon Quantum Dot, Lumping Capacitance, Single-Electron Memorizer

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