The Study of CIGS Absorption Layer Grown by Two-Step Growth Method for Thin-Film Solar Cell

Li Zen Hsieh; Xi Ming Duan; Ming Jer Jeng

doi:10.4028/www.scientific.net/AMM.418.238

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vol. 418The Study of CIGS Absorption Layer Grown by...

The Study of CIGS Absorption Layer Grown by Two-Step Growth Method for Thin-Film Solar Cell

Abstract:

Two-step growth method was used for CuInGaSe₂,(CIGS) absorption layer in this study. The layer was first deposited by thermal evaporator to use indium and gallium sauces at a vacuum of 5 × 10^-6 torr and secondly, the deposited thin film was enclosed in a quartz cartridge for the first selenization. The second selenization process was coated by copper and then annealed again in a furnace. Finding best precursor for thin film solar cells was analyzed by scanning electron microscope (SEM), X-ray diffraction analyzer (XRD) and energy dispersive spectrometer (EDS).

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Periodical:

Applied Mechanics and Materials (Volume 418)

Pages:

238-241

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.418.238

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Online since:

September 2013

Authors:

Li Zen Hsieh, Xi Ming Duan, Ming Jer Jeng

Keywords:

CIGS, Selenization, Solar Cell

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References

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