A Marginal Isolation Failure Caused by Thin Film Quality Issue Analysis in a 45nm Logic Process

Cheng Xing Yang; Wen Ming Zhu; Paul Lin

doi:10.4028/www.scientific.net/AMM.421.235

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vol. 421A Marginal Isolation Failure Caused by Thin Film...

A Marginal Isolation Failure Caused by Thin Film Quality Issue Analysis in a 45nm Logic Process

Abstract:

On a 45nm logic product that suffered special pattern function failure, electrical failure analysis identified the failure as soft failure and localized the failure addresses. PVC (Passive Voltage Contrast) was used to narrow down suspected process steps to M1 or below layers, FIB (Focus Ion Beam) and TEM (Transmission Electronic Microscope) approaches were used to identify the actual root cause and failure mechanism.

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Periodical:

Applied Mechanics and Materials (Volume 421)

Pages:

235-238

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.421.235

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Online since:

September 2013

Authors:

Cheng Xing Yang, Wen Ming Zhu, Paul Lin

Keywords:

Focus Ion Beam (FIB), Passive Voltage Contrast (PVC), Soft Failure, Thin Film Quality, Transmission Electronic Microscope (TEM)

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