Effect of SiC and ZrO2 on Low Temperature Oxidation Resistance of MoSi2 Nanocomposites

Chang Hong Liu; Yun Long Ai; Bing Liang Liang

doi:10.4028/www.scientific.net/AMM.423-426.11

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 423-426Effect of SiC and ZrO2 on Low Temperature...

Effect of SiC and ZrO₂ on Low Temperature Oxidation Resistance of MoSi₂Nanocomposites

Abstract:

The single and synergism effect of SiC and ZrO₂ nanoparticles on low temperature oxidation resistance of MoSi₂were investigated by thermo-gravimetric analysis (TGA), phase and micrograph analysis of surface film. The results show that at the oxidation temperature of 600°C, the addition of 10%ZrO₂results in obvious oxidation mass gain of MoSi_2,and discontinuous protective film forming on the surfaces, which makes “pesting” phenomenon still occur. The addition of 10%SiC accelerates the oxidation of MoSi₂, but compact SiO₂ protective film formed on the surface after some time of oxidation, avoiding the occurrence of large scope of “pesting” phenomenon. The synergism of 10%ZrO₂and 10%SiC promotes the formation of compact, even silicate glass film on the surface of MoSi₂, as a result, significantly improves the low temperature oxidation resistance of MoSi₂.

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Periodical:

Applied Mechanics and Materials (Volumes 423-426)

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11-15

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.423-426.11

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Online since:

September 2013

Authors:

Chang Hong Liu, Yun Long Ai, Bing Liang Liang

Keywords:

Low Temperature Oxidation Resistance, MoSi₂, Pesting, Silicon Carbide (SiC), Zro₂

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