Effects of Annealing and Different Substrate Materials on Ohmic Contact Property of IGZO Films

Abstract:

Amorphous InGaZnO(a-IGZO) films were deposited on the glass substrates with Al/Mo/ITO films separately using magnetron sputtering and photograph methods,to form resistance structures between a-IGZO films and Al/Mo/ITO films.These samples were annealed in the air and N₂ ambience in a series of temperature separately.The results show that regardless of N₂ or air ambience,samples annealing at 250 degrade,IGZO films show a good ohmic contact characteristic withAl/Mo/ITOmaterials.And,IGZO films have a better ohmic contact characteristic with ITO/Al than Mo. The transmittance of the IGZO films annealed is better than the transmittance of samples without annealing.And ,the transmittance of samples annealed is rising with the increasing of annealing temperature. Considering the optical and electrical properties of IGZO films, we suggest that 250 centi degrades is a suitable temperature for annealing.

• Periodical: Applied Mechanics and Materials (Volumes 423-426)
• Pages: 846-851
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.423-426.846
• Online since: September 2013
• Authors: Ji Feng Shi
• Keywords: Electrical and Opticalproperties, IGZO Films, Magnetron Sputtering

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