Preparation and Dielectric Properties of La Doped Bi2Al4O9

Xiao Yan Zhang; Xi Wei Qi; Jun Fang Wei; Wen Shu Hu; Gui Fang Sun; Rui Xia Zhong; Huan Huan Chen

doi:10.4028/www.scientific.net/AMM.423-426.890

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 423-426Preparation and Dielectric Properties of La Doped...

Preparation and Dielectric Properties of La Doped Bi₂Al₄O₉

Abstract:

A series of (Bi_1-xLa_x)₂Al₄O₉(x = 0, 0.05, 0.10, 0.15, 0.20, 0.25, 0.30, 0.40) ceramics were prepared by sol-gel method with sintering process. Doping dependent investigations were carried out to show the influence of La atom on the structural stability. The products were characterized using X-ray diffraction, scanning electron microscopy. This showed that the second phase is increased gradually by La doping. When the value of La is 0.4, the main phase tends to become LaAlO₃. Details on dielectric properties are reported. The permittivity of as-prepared doped samples increases slightly compared to pure Bi₂Al₄O₉and excellent frequency stability is exhibited.

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Periodical:

Applied Mechanics and Materials (Volumes 423-426)

Pages:

890-893

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.423-426.890

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Online since:

September 2013

Authors:

Xiao Yan Zhang, Xi Wei Qi, Jun Fang Wei, Wen Shu Hu, Gui Fang Sun, Rui Xia Zhong, Huan Huan Chen

Keywords:

Bi₂Al₄O₉, Dielectric Property, La Doped, Preparation

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References

[1] E. I. Speranskaya, V. M. Skorokov, G. M. Safronov and E. N. Gaidukov: Inorganic Materials Vol. 6 (1970), p.1201.

Google Scholar

[2] I. Abrahams, 1 A. J. Bush, G. E. Hawkes, and T. Nunes: Journal of Solid State Chemistry Vol. 147 (1999), p.631.

Google Scholar

[3] S. W. Zha, J. G. Cheng, Y. Liu, X. G. Liu and G. Y. Meng: Solid State Ionics Vol. 156 (2003), p.197.

Google Scholar

[4] T. M. Gesing, R. X. Fischer, M. Burianek, M. Mühlberg, T. Debnath, C. H. Rüscher, J. Ottinger, J. C. Buhl and H. Schneider: Journal of the European Ceramic Society Vol. 31 (2011), p.3055.

DOI: 10.1016/j.jeurceramsoc.2011.04.004

Google Scholar

[5] S. Ohmann, P. Fielitz, L. Dörrer, G. Borchardt, Th. M. Gesing, R. X. Fischer, C. H. Rüscher, J. C. Buhl , K. D. Becker and H. Schneider: Solid State Ionics Vol. 211 (2012), p.46.

DOI: 10.1016/j.ssi.2012.01.030

Google Scholar

[6] I. Bloom, M. C. Hash, J. P. Zebrowski, K. M. Myles and M. Krumpelt: Solid State Ionics Vol. 53-56 (1992), p.739.

DOI: 10.1016/0167-2738(92)90249-o

Google Scholar

[7] S. Zha, J. Cheng, Y. Liu, X. Liu and G. Meng: Solid State Ionics Vol. 156 (2003), p.197.

Google Scholar