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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vol. 432The Strain Distribution and Equilibrium Morphology...

The Strain Distribution and Equilibrium Morphology for Dome-Shaped Ge/Si Semiconductor Quantum Dot

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Abstract:

The stress and strain in a growing sample are driving forces leading to the formation of self-assembled quantum dots in lattice-mismatched heteroepitaxy.The stress and strain distributions, as well as the dependence of the strain energy on the aspect ratio, of a dome self-assembled Ge/Si semiconductor quantum dot are investigated based on finite element method of anisotropic theory of elasticity. The free energy consisting of the strain energy and surface energy is defined, and used to study the equilibrium shape of the systems. The results are consistent with experiment observations.

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Periodical:

Applied Mechanics and Materials (Volume 432)

Pages:

39-46

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.432.39

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Online since:

September 2013

Authors:

Wang Min Zhou, Long Gao, Cheng Yu Cai, Shu Yuan Yin

Keywords:

Equilibrium Shape, Quantum Dot (QD), Strain Distribution

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© 2013 Trans Tech Publications Ltd. All Rights Reserved

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