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Enhanced Diamond Nucleation by Surface Texturing of Si Substrate in SF6/O2 Plasmas

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Abstract:

SF6/O2 plasma surface texturing was employed to pretreat Si substrate for achieving enhanced diamond nucleation density. Surface roughness of the textured Si was found to be strongly dependent on the process pressure and normalized roughness values in the range of 2-16 were obtained. Remarkably enhanced nucleation densities of ~1010 cm-2 compared to conventional mechanical abrasion were obtained after seeding for the surface textured Si substrates. Raman spectroscopy revealed that ultrananocrystalline diamond films with grain size below 10 nm were grown on the surface textured Si.

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Periodical:

Applied Mechanics and Materials (Volume 432)

Pages:

61-65

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.432.61

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Online since:

September 2013

Authors:

Jong Cheon Park, Ok Geun Jeong, Sang Youn Kim, Tae Gyu Kim, Jin Kon Kim, Hyun Cho

Keywords:

Diamond Nucleation, Nanocrystalline Diamond Film, Nucleation Density, SF6/O2 Plasma, Si Substrate, Surface Texturing

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© 2013 Trans Tech Publications Ltd. All Rights Reserved

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