Research on Junction Termination Protection Technology for 3.3 kV Power Devices

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The necessary condition for power devices with enough blocking properties is Junction termination technology. In this paper, starting with the dose of rings, 3.3 kV Floating Filed Rings was investigated, and the influence of electric field and current density on the breakdown characteristic is also described. The results show that the dose of field rings directly affects the stability of breakdown voltage, this impact is relevant to the location of the peak electric field and the peak current density when breakdown was occurred. When the peak electric field appears in the middle of the field rings, the breakdown voltage is not sensitive to the dose of rings; however, when the peak electric field and strongest current density appeared on the edge of termination at the same time, breakdown voltage become very sensitive to the dose of rings because of the highest impact ionization in this position. Simulations and experiments indicate that the junction termination has better withstand voltage stability , when electric field distributes uniformly, the position of breakdown is in the middle of the termination, and the strongest current density appears in the main junction.

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1486-1491

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October 2013

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© 2013 Trans Tech Publications Ltd. All Rights Reserved

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[1] J. Cornu : Field distribution near the surface of beveled P-N junctions in high-voltage devices. IEEE Transactions on Electron Devices. Vol. 20. no. 4(1973), pp.347-52.

DOI: 10.1109/t-ed.1973.17654

Google Scholar

[2] D. Dragomirescu, G. Charitat, F. Moraiicho, P. Rossel : Novel Concepts for High Voltage Junction Termination Techniques Using Very Deep Trenchs. Proc 1999 Int Semicond Conf. (1999). Vo1. 1, p: 67-70.

DOI: 10.1109/smicnd.1999.810432

Google Scholar

[3] F. Conti, M. Conti: Surface breakdown in silicon planar diodes equipped with field plate. Solid State electron. Vol. 15. (1972), p: 93-105.

DOI: 10.1016/0038-1101(72)90070-6

Google Scholar

[4] Y.C. Kao, E.D. Wolley: High-voltage planar p-n junctions. Proc. IEEE[C]. (1967). 55, p: 1409-1414.

DOI: 10.1109/proc.1967.5842

Google Scholar

[5] V. A. K. Temple: JTE a new technique for increasing breakdown voltage and controlling surface field. IEDM[C]. (1977), p : 423-426.

Google Scholar

[6] R. Stengl, U. Gosele: Variation of lateral doping-a new concept to avoid high voltage breakdown of planar junctions. Int. Electron Devices Meet. (1988), p : 154-156.

DOI: 10.1109/iedm.1985.190917

Google Scholar

[7] B. JAYANT BALIGA, in: MODERN POWER DEVICES , edtied by Wiley - Interscience Publication, (1987), in press.

Google Scholar