A Simulation Method of Pressure-Stress Affects Power Press Pack FRD Chip Forward Voltage

Ge Zhao; Yu Zhang; Yue Yang Liu; Jia Jie Che; Wen Yu Gao; Rui Jin; Kun Shan Yu

doi:10.4028/www.scientific.net/AMM.433-435.2121

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 433-435A Simulation Method of Pressure-Stress Affects...

A Simulation Method of Pressure-Stress Affects Power Press Pack FRD Chip Forward Voltage

Abstract:

Press Pack IGBTs modules have the characteristics of easy series connection and double side cooling widely used in industry, electric power, smart grid and other fields. Press Pack FRD (Fast Recovery Diode) chips is a component of Press Pack IGBTs module. In the actual operating conditions, the electrical parameters of FRD device will change in the electrical properties under pressure-stress, especially the Forward Voltage (VF) parameters. This change of the VF parameters will have adverse effect on the reliability of FRD chip and the overall module. In this paper, according to the stress of physical model of semiconductor material silicon were analyzed, proposed method to stress effect on the VF parameter of the FRD simulation analysis software.

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Periodical:

Applied Mechanics and Materials (Volumes 433-435)

Pages:

2121-2124

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.433-435.2121

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Online since:

October 2013

Authors:

Ge Zhao*, Yu Zhang, Yue Yang Liu, Jia Jie Che, Wen Yu Gao, Rui Jin, Kun Shan Yu

Keywords:

FRD, Piezoresistive, Press Pack, Stress, V/F

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* - Corresponding Author

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