Effects of Rapid Thermal Process on the Microstructural, Electrical and Optical Properties of AZO Thin Films

Rong Bin Liu; Kai Liang Zhang; Yu Jie Yuan; Fang Wang; Juan Xu

doi:10.4028/www.scientific.net/AMM.441.11

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vol. 441Effects of Rapid Thermal Process on the...

Effects of Rapid Thermal Process on the Microstructural, Electrical and Optical Properties of AZO Thin Films

Abstract:

In this paper, Al-doped ZnO thin films were deposited on glass substrates by RF magnetron sputtering and subsequently rapid thermal processing was executed under temperature range from 300°C to 600°C in order to investigate the microstructure, electrical, and optical properties of AZO films. XRD and AFM microscopy results showed that all the samples were of poly-crystalline and the grain size became larger with the increasing processing temperature. Compared with the sample as-deposited, it was shown that resistivity decreased from 1.9×10^-2 to 1.48×10^-3Ωcm and carrier concentration increased from 1.48×10²⁰ to 5.59×10²⁰ cm³when the sample was processed at 600°C in pure nitrogen for 1 min. The highest transmittance of the samples processed at 500°C improves to 90.35% compared with the as-deposited films (68.2% ) as the wavelength varied between 400 and 900 nm.

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Periodical:

Applied Mechanics and Materials (Volume 441)

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11-14

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.441.11

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Online since:

December 2013

Authors:

Rong Bin Liu, Kai Liang Zhang*, Yu Jie Yuan, Fang Wang, Juan Xu

Keywords:

AZO Thin Films, Rapid Thermal Process, RF Magnetron Sputter

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