Investigation of Texturing for Mono-Crystalline Silicon without IPA

Article Preview

Abstract:

Isopropyl alcohol (IPA) is widely used as an additive to enhance the alkaline texturing process of mono-crystalline silicon solar cells currently. However, due to its low boiling point and high volatilization, some negative effects are brought into large scale production especially in stability, cost and environment. In this paper, an IPA-free texturing process was studied by using other additive instead of IPA. The influences of concentration of KOH and additive on etching rate, surface morphology and weighted reflectance were investigated. It is found that the additive has an opposite effect on etching rate and pyramid size compared to KOH. The etching rate and average pyramid size decrease with the concentration of additive increased. The best weight reflectance of 10.8% and lowest average pyramid size of 1.1 um were obtained on mono-crystalline silicon surface by an optimized solution of 1.5 wt% KOH and 1.5 wt% additive at 80oC for 20 minutes. Finally, the effects of KOH and IPA-free additive on the texturing process were also discussed in detail.

You might also be interested in these eBooks

Info:

Periodical:

Pages:

129-133

Citation:

Online since:

October 2013

Export:

Price:

Permissions CCC:

Permissions PLS:

Сopyright:

© 2014 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

* - Corresponding Author

[1] D. Munoz, P. Carreras, J. Escarre, D. Ibarz, S.M. de Nicolas, C. Voz, J.M. Asensi, J. Bertomeu, Optimization of KOH etching process to obtain textured substrates suitable for heterojunction solar cells fabricated by HWCVD, Thin Solid Films, 517 (2009).

DOI: 10.1016/j.tsf.2009.01.024

Google Scholar

[2] H. Park, S. Kwon, J.S. Lee, H.J. Lim, S. Yoon, D. Kim, Improvement on surface texturing of single crystalline silicon for solar cells by saw-damage etching using an acidic solution, Solar Energy Materials and Solar Cells, 93 (2009) 1773-1778.

DOI: 10.1016/j.solmat.2009.06.012

Google Scholar

[3] M. Moynihan, C. O'Connor, B. Barr, S. Tiffany, W. Braun, G. Allardyce, J. Rentsch, K. Birmann, In-line and vertical texturing of mono-crystalline solar cells, in: Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE, 2010, pp.001028-001033.

DOI: 10.1109/pvsc.2010.5614629

Google Scholar

[4] E.S. Marstein, H.J. Solheim, D.N. Wright, A. Holt, Ieee, Acidic texturing of multicrystalline silicon wafers, in: Conference Record of the Thirty-First IEEE Photovoltaic Specialists Conference - 2005, 2005, pp.1309-1312.

DOI: 10.1109/pvsc.2005.1488381

Google Scholar

[5] M. Moreno, D. Daineka, P. Roca i Cabarrocas, Plasma texturing for silicon solar cells: From pyramids to inverted pyramids-like structures, Solar Energy Materials and Solar Cells, 94 (2010) 733-737.

DOI: 10.1016/j.solmat.2009.12.015

Google Scholar

[6] P. Papet, O. Nichiporuk, A. Kaminski, Y. Rozier, J. Kraiem, J.F. Lelievre, A. Chaumartin, A. Fave, M. Lemiti, Pyramidal texturing of silicon solar cell with TMAH chemical anisotropic etching, Solar Energy Materials and Solar Cells, 90 (2006).

DOI: 10.1016/j.solmat.2006.03.005

Google Scholar

[7] E. Vazsonyi, K. De Clercq, R. Einhaus, E. Van Kerschaver, K. Said, J. Poortmans, J. Szlufcik, J. Nijs, Improved anisotropic etching process for industrial texturing of silicon solar cells, Solar Energy Materials and Solar Cells, 57 (1999) 179-188.

DOI: 10.1016/s0927-0248(98)00180-9

Google Scholar

[8] M. Zimmer, K. Birmann, J. Rentsch, Online process control of alkaline texturing baths with near-infrared spectroscopy, Vibrational Spectroscopy, 53 (2010) 269-273.

DOI: 10.1016/j.vibspec.2010.04.005

Google Scholar

[9] S.A. Campbell, K. Cooper, L. Dixon, R. Earwaker, S.N. Port, D.J. Schiffrin, Inhibition of pyramid formation in the etching of Si p(100) in aqueous potassium hydroxide-isopropanol Journal of Micromechanics and Microengineering, 5 (1995) 209-218.

DOI: 10.1088/0960-1317/5/3/002

Google Scholar

[10] C.R. Yang, P.Y. Chen, Y.C. Chiou, R.T. Lee, Effects of mechanical agitation and surfactant additive on silicon anisotropic etching in alkaline KOH solution, Sensors and Actuators a-Physical, 119 (2005) 263-270.

DOI: 10.1016/j.sna.2004.07.015

Google Scholar

[11] K.P. Rola, I. Zubel, Modifying of etching anisotropy of silicon substrates by surface active agents, Central European Journal of Physics, 9 (2011) 410-416.

DOI: 10.2478/s11534-010-0114-9

Google Scholar

[12] E. Wefringhaus, A. Helfricht, KOH/surfactant as an alternative to KOH/IPA for texturisation of monocrystalline silicon, Proc. 24th EU PVSEC, Hamburg, Germany, (2009) 1860-1862.

Google Scholar

[13] K. Birmann, M. Zimmer, J. Rentsch, Fast Alkaline Etching of Monocrystalline Wafers in KOH/CHX, in: 23rd European PVSEC, (2008).

Google Scholar