The Study on LED Accelerated Life Testes and Failure Mechanism

Yue Zong Zhang; Chun Xia Li; Wen Bin Zhang

doi:10.4028/www.scientific.net/AMM.462-463.678

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 462-463The Study on LED Accelerated Life Testes and...

The Study on LED Accelerated Life Testes and Failure Mechanism

Abstract:

The paper is studied on the performances of low power light-emitting diode and high power LED under high-current. After observing and measuring the degeneration of them, the Analysis of the failure mechanism is given. The degenerations of the optical parameter, electronic parameter and thermal parameter of high power LED under 600mA current stress are measured and the failure mechanism is analyzed. The I-V characteristic curve proves that the degeneration is happened in active region. Under high-current stress, the active region of high power LED is ageing which leads to much more defects. The degenerations of pins on the resin package, metal wire and surface layer metal pads are found with scanning electron microscope.

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Periodical:

Applied Mechanics and Materials (Volumes 462-463)

Pages:

678-682

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.462-463.678

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Online since:

November 2013

Authors:

Yue Zong Zhang*, Chun Xia Li, Wen Bin Zhang

Keywords:

Accelerated Life Test, Degeneration, Failure Mechanism

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References

[1] Hyunsoo Kim, Hyundoek Yang, Chul Huh, et al. Electromigration-induced failure of GaN multi-quantum well light emitting diode. electronics letters, Vol. 36(10), ( 2000), p.908.

DOI: 10.1049/el:20000657

Google Scholar

[2] Min-Ho Kim, Martin F. Schubert, Qi Dai, et al. Origin of efficiency droop in GaN-based light-emitting diodes. Applied Physics Letters, Vol. 91(18), ( 2007), pp.183507-1.

DOI: 10.1063/1.2800290

Google Scholar

[3] Y. C. Shen, G. O. Mueller, S. Watanabe, et al. Auger recombination in InGaN measured by photoluminescence . Applied Physics Letters, Vol. 91(14), (2007), pp.141101-1.

DOI: 10.1063/1.2785135

Google Scholar

[4] A. A. Efremov, N. I. Bochkareva, R. I. Gorbunov, et al. Effect of the joule Heating on the Quantum Efficiency and Choice of Thermal Conditions for High-Power Blue InGaN/GaN LEDs. Physics of Semiconductor Devices. Vol. 40(5), (2006), p.605.

DOI: 10.1134/s1063782606050162

Google Scholar

[5] X. A. Cao, P. M. Sandvik, S.F. LeBoeuf, et al. Defect generation in InGaN/GaN light-emitting diodes under forward and reverse electrical stress. Microelectronics Reliability, Vol. 43 (2003), p. (1987).

DOI: 10.1016/j.microrel.2003.06.001

Google Scholar

[6] Lorenzo Trevisanello, Matteo Meneghini, Giovanna Mura, et al. Accelerated Life Test of High Brightness Light Emitting diodes. IEEE Transactions on device and materials reliability, Vol. 8(2) , (2008),P. 304.

DOI: 10.1109/tdmr.2008.919596

Google Scholar