Giant Electroresistance Induced by Electric Currents in Epitaxial Thin Films of Pr_0.7Sr_0.3MnO₃

Abstract:

Electric-current induced electroresistance effect has been investigated in epitaxial Pr_0.7Sr_0.3MnO₃ thin film grown on the (100) SrTiO₃ substrate. A significant change ~38% in the ratio of the peak resistance at different currents with a current density up to ~3.3×10³ A/cm² was achieved. Such an ER effect is more remarkable in comparing with that reported in other manganite oxides with similar current densities. Compared with that of the as-grown films, the electroresistance of the post-annealed films is smaller, while the ER effect (~14%) is obtained. Although the nature behind such an electroresistance effect has not been well understood, the field tunability of the metal/insulator transition and the electroresistance effect induced by currents might be of potential for various applications such as filed effect devices.

• Periodical: Applied Mechanics and Materials (Volume 483)
• Pages: 130-133
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.483.130
• Online since: December 2013
• Authors: He Yan Liu*, Liang Zhou, Ying Li, Guo Dong Liu
• Keywords: Electroresistance, Perovskite Oxide, Pr_0.7Sr_0.3MnO₃

References

[1] A. Moreo, S. Yunoki, and E. Dagotto, Science 283 (1999) (2034).

[2] M. Fäth, S. Freisem, A.A. Menovsky, Y. Tomioka, J. Aarts, J.A. Mydosh, Science 285 (1999) 1540.

DOI: 10.1126/science.285.5433.1540

[3] T. Wu, S.B. Ogale, J.E. Garrison, B. Nagaraj, Amlan Biswas et al., Phys. Rev. Lett. 86 (2001) 5998.

[4] C.N.R. Rao, A.R. Raju, V. ponnambalam, Sachin Parashar, N. Kumar, Phys. Rev.B. 61 (2000) 594.

[5] A. Asamitsu, Y. Yomioka, H. Kuwahara, Y. Tokura, Nature (London) 388 (1997) 50.

[6] J. Gao, S. Q, Shen, T.K. Li, J.R. Sun, Appl. Phys. Lett. 82 (2003 ) 4732.

[7] D.S. Kim, C.E. Lee, Y.H. Kim, Y.T. Kim, J. Appl. Phys. 100 (2006) 093901.

[8] Z.H. Wu, Q. Wang, W.D. Yu, D.S. Shang, J. Phys. D: Appl. Phys. 41 (2008) 025401.

[9] F.X. Hu, J. Gao, Phys. Rev. B 69 (2004) 212413.

[10] C. Martin, A. Maignan, M. Hervieu, B. Raveau, Phys. Rev. B 60 (1999) 12191.

[11] G.X. Xiong, B. Zhang, S.C. Wu, Z.X. Lu, G.J. Lian, D.S. Dai, Solid State Communi. 97 (1996) 777.

[12] V. Markovich, I. Fita, R. Puzniak, A. Wisniewski, K. Suzuki et al, Phys. Rev. B 71 (2005) 224409.