Interaction Relationship Analysis of Surface Roughness on Aluminium Etched Wafer Using RIE

Zaliman Sauli; Vithyacharan Retnasamy; Aaron Koay Terr Yeow; Ng Wei Wei

doi:10.4028/www.scientific.net/AMM.487.214

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vol. 487Interaction Relationship Analysis of Surface...

Interaction Relationship Analysis of Surface Roughness on Aluminium Etched Wafer Using RIE

Abstract:

This paper presents the interaction relationships between Tetrafluoromethane (CF₄) gas, Oxygen (O₂) gas, and RF power in response to the surface roughness of an Aluminium deposited wafer after being etched using Reactive Ion Etching (RIE). The investigation was done using the three factors full factorial design of experiment (DOE). Analysis was done qualitatively by plotting the main interaction plots. The results suggest that strong interactions are present between CF₄ and RF power, CF₄ and O₂, and also O₂ and RF power due to the intersection of the graphs. This implies that all three factors have interaction between each other towards the surface roughness on the deposited Aluminium after RIE.

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Applied Mechanics and Materials (Volume 487)

Pages:

214-217

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.487.214

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Online since:

January 2014

Authors:

Zaliman Sauli, Vithyacharan Retnasamy*, Aaron Koay Terr Yeow, Ng Wei Wei

Keywords:

Aluminum (Al), Design of Experiment (DOE), Reactive Ion Etching (RIE), Surface Roughness (SR)

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