Investigation on the Heat Conduction in Si/3C-SiC/Graphene Film

Abstract:

Based on the nonequilibrium Molecular Dynamics method, interfacial thermal resistances of Si/3C-SiC/grphene composite films are investigated. The dependencies of interfacial thermal resistances of Si/3C-SiC and 3C-SiC/grphene on temperatures and the thickness of buffer layers are simulated separately. The results indicate that the interfacial thermal resistances of Si/3C-SiC and 3C-SiC/grphene increase with the increase of temperatures at the range of 100~700K, and converge to 3.4×10-9 Km²/W. In the Si/3C-SiC/grphene composite film, 3C-SiC connects Si substrate with grphene sheets. The results show the relationships between interfacial thermal resistances and the thickness are not prominent, and the maximum value of interfacial thermal resistance locates at 24×3.35 Å.

• Periodical: Applied Mechanics and Materials (Volume 487)
• Pages: 63-66
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.487.63
• Online since: January 2014
• Authors: Zan Wang*, Hua Wei Guan
• Keywords: Graphene, Molecular Dynamic (MD), Si, Silicon Carbide (SiC), Thermal Conductivity (TC)

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