Temperature-Induced Structure and Morphological Transformation in SnS Prepared by a Chemical Vapor Deposition Method

Ren Fu Zhuo; Yi Nong Wang; De Yan; Xiao Yong Xu; Zhi Guo Wu

doi:10.4028/www.scientific.net/AMM.513-517.286

Paper Titles

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Identification of Electrical Fire Melted Marks of Copper Wires by Electron Backscattered Diffraction (EBSD)
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Temperature-Induced Structure and Morphological Transformation in SnS Prepared by a Chemical Vapor Deposition Method
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Computational Studies on O(3P) +CHF2 Reaction Mechanism
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Amorphous State and Solubility Simulation of Poly(N-arylenebenzimidazole ketone)
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Recalculation Yielded the Small Molecule Fragments of C₃H₆⁺ from Low Excited States of C₅H₈O⁺
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Combined Effects of Guard Rings and Buried n⁺ Layer on Mitigating Charge Collection and Charge Sharing in 90 nm CMOS Process
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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 513-517Temperature-Induced Structure and Morphological...

Temperature-Induced Structure and Morphological Transformation in SnS Prepared by a Chemical Vapor Deposition Method

Abstract:

SnS thin films were deposited at different temperatures on silicon and quartz plates through directly elementary reaction via a simple chemical vapor deposition (CVD) process. The as-prepared products have a transformation of morphology from plate-like to granule-like when the temperature increased. A mechanism involving two competitive factors, surface energy and binding energy, was proposed to understand their growth. The products prepared at low temperature were single crystal while the films made in high temperature are polycrystal, the optical band gap (1.2~2.1ev) and the Sn:S atom ratios increases as the deposited temperature increases.