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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 513-517Combined Effects of Guard Rings and Buried n+...

Combined Effects of Guard Rings and Buried n⁺ Layer on Mitigating Charge Collection and Charge Sharing in 90 nm CMOS Process

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Abstract:

A model of combining of guard rings and buried n⁺layer in mitigating charge collection and charge sharing is presented in this paper. 3-D TCAD simulation results indicate that for 90-nm CMOS process, PMOS charge collection and charge sharing can be mitigated more effectively with the combination model than the solely use of guard rings or buried n⁺ layer. With the combination, a noticeable improvement on angled ion strikes is also represented. The model shows a significant advantage in high-energy ion strikes and angled ion strikes.

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Periodical:

Applied Mechanics and Materials (Volumes 513-517)

Pages:

303-308

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.513-517.303

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Online since:

February 2014

Authors:

Wan Li Zhang*, Shao An Yan, Ming Hua Tang, Xin Yu Xu, Yan Hu Mao, Peng Cheng Huang

Keywords:

Charge Collection, Charge Sharing, Guard Ring, n⁺ Buried Layer, Radiation-Hardened-By-Design (RHBD)

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© 2014 Trans Tech Publications Ltd. All Rights Reserved

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