Study on Chemical Mechanical Polishing Removal Mechanism of Monocrystalline Silicon

Abstract:

In this paper, material removal mechanism of monocrystalline silicon by chemical etching with different solutions were studied to find effective oxidant and stabilizer. Material removal mechanism by mechanical loads was analyzed based on the measured acoustic signals in the scratching processes and the observation on the scratched surfaces of silicon wafers. The chemical mechanical polishing (CMP) processes of monocrystalline silicon wafers were analyzed in detail according to the observation and measurement of the polished surfaces with XRD. The results show that H₂O₂ is effective oxidant and KOH stabilizer. In a certain range, the higher concentration of oxidant, the higher material removal rate; the higher the polishing liquid PH value, the higher material removal rate. The polishing pressure is an important factor to obtain ultra-smooth surface without damage. Experimental results obtained silicon polishing pressure shall not exceed 42.5kPa.

• Periodical: Applied Mechanics and Materials (Volume 538)
• Pages: 40-43
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.538.40
• Online since: April 2014
• Authors: Hong Wei Du*, Yan Ni Chen
• Keywords: Chemical Mechanical Polishing, Erosion, Material Removal, Monocrystalline Silicon, Scratch

References

[1] Lv Yang. The research on FE simulation and experiment of nanoindentation for the crystal characteristics of monocrystal silicom. Doctoral Dissertation of Jilin University, (2010).

[2] http: /www. dz-z. com/knowledge/d577829. html.

[3] Sun Y L，Zuo D W，Wang H Y，et al. Mechanism of brittle-ductile transition of a glass-ceramic rigid substrate. International Journal of Minerals Metallurgy and Materials, 2011, Vol. 18(2): 229－233.

DOI: 10.1007/s12613-011-0427-8

[4] Zhong Qihe. Control method on Scratching of silicon wafer polishing surface. CN101367189A, (2007).

[5] LIU Yu-ling. Study on Chemical Mechanical Polishing of Silicon Wafer. Electronics Process Technology. 2010, Vol. 31(9): 299-302.

[6] Xu Zongsheng. Study on the surface layer damage of sawed monocrystalline and polycrystalline silicon wafers. Masteral Dissertation of Dalian University of Technology, (2013).

[7] Wang Minghai, Wang Wei, Gao Lei. Process of ducile-brittle transition of crystal brittle materials on ultra-precision machining. Journal of Beijing University of Aeronautics and Astronautics, 2013, Vol. 39 (3): 366-370.