Effect of Dressing Load and Speed on Removal Rate in the Chemical Mechanical Polishing Process

Ming Yi Tsai; W.K. Chen; Hung Jung Tsai

doi:10.4028/www.scientific.net/AMM.55-57.832

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 55-57Effect of Dressing Load and Speed on Removal Rate...

Effect of Dressing Load and Speed on Removal Rate in the Chemical Mechanical Polishing Process

Abstract:

A pad conditioner or diamond disk is needed to regenerate the asperity structure of the pad and recover its designated role in the chemical mechanical polishing process. In this paper, the effect of dressing load and speed on removal rate of oxidized wafers were investigated using a polycrystalline diamond disk and brazed diamond disk. It was found that polycrystalline diamond disk enable the manufacturer to tightly control diamond leveling and the cutter’s shape by comparison with a brazed diamond disk that contains discrete diamond grits of random orientation. Experimental results revealed that for polycrystalline diamond disk, the removal rate of oxidized wafer displayed an almost unchanged curve when the load was less than 4kg, but the removal rate of oxidized wafer for brazed diamond disk initially increased with the dressing load, reaching a maximum value at a dressing load of approximately 4 kg. Then, it decreased slowly with further increases of the dressing load. The removal rate of oxidized wafer remains unchanged with dressing speed.

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Periodical:

Applied Mechanics and Materials (Volumes 55-57)

Pages:

832-837

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.55-57.832

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Online since:

May 2011

Authors:

Ming Yi Tsai, W.K. Chen, Hung Jung Tsai

Keywords:

Chemical Mechanical Polishing (CMP), Diamond Conditioner, Polishing Pad

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