Model of DOS near the Top of Valence Band in Strained Si1-xGex/(001)Si
Strained Si1-xGex technology has been widely adopted to enhance hole mobility. One of the most important physical parameters is density of state near the top of valence band in strained Si1-xGex materials. In this paper, we first obtained the hole effective mass along arbitrarily k wavevector directions, the hole isotropic effective masses and density of state effective mass of hole in strained Si1-xGex/(001)Si with the framework of K.P theory. And then, model of density of state near the top of valence band in strained Si1-xGex/(001)Si materials was established, which can provide valuable references to the understanding on its material physics and theoretical basis on the other important physical parameters.
J. J. Song et al., "Model of DOS near the Top of Valence Band in Strained Si1-xGex/(001)Si", Applied Mechanics and Materials, Vols. 55-57, pp. 979-982, 2011