Model of DOS near the Top of Valence Band in Strained Si_1-xGe_x/(001)Si

Abstract:

Strained Si_1-xGe_x technology has been widely adopted to enhance hole mobility. One of the most important physical parameters is density of state near the top of valence band in strained Si_1-xGe_x materials. In this paper, we first obtained the hole effective mass along arbitrarily k wavevector directions, the hole isotropic effective masses and density of state effective mass of hole in strained Si_1-xGe_x/(001)Si with the framework of K.P theory. And then, model of density of state near the top of valence band in strained Si_1-xGe_x/(001)Si materials was established, which can provide valuable references to the understanding on its material physics and theoretical basis on the other important physical parameters.

• Periodical: Applied Mechanics and Materials (Volumes 55-57)
• Pages: 979-982
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.55-57.979
• Online since: May 2011
• Authors: Jian Jun Song, Heng Sheng Shan, He Ming Zhang, Hui Yong Hu, Guan Yu Wang, Jian Li Ma, Xiao Bo Xu
• Keywords: Density of States (DOS), Hole Effective Mass, Strained Si_1-xGe_x

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