Model of DOS near the Top of Valence Band in Strained Si1-xGex/(001)Si

Abstract:

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Strained Si1-xGex technology has been widely adopted to enhance hole mobility. One of the most important physical parameters is density of state near the top of valence band in strained Si1-xGex materials. In this paper, we first obtained the hole effective mass along arbitrarily k wavevector directions, the hole isotropic effective masses and density of state effective mass of hole in strained Si1-xGex/(001)Si with the framework of K.P theory. And then, model of density of state near the top of valence band in strained Si1-xGex/(001)Si materials was established, which can provide valuable references to the understanding on its material physics and theoretical basis on the other important physical parameters.

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Periodical:

Edited by:

Qi Luo

Pages:

979-982

DOI:

10.4028/www.scientific.net/AMM.55-57.979

Citation:

J. J. Song et al., "Model of DOS near the Top of Valence Band in Strained Si1-xGex/(001)Si", Applied Mechanics and Materials, Vols. 55-57, pp. 979-982, 2011

Online since:

May 2011

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$35.00

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