Preparation and Characterization of Fe Doped Bi2Ga4O9 Ceramics

Huan Huan Chen; Xiao Yan Zhang; Xi Wei Qi; Zhao Jie Zhou; Gui Fang Sun

doi:10.4028/www.scientific.net/AMM.552.283

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vol. 552Preparation and Characterization of Fe Doped...

Preparation and Characterization of Fe Doped Bi₂Ga₄O₉ Ceramics

Abstract:

A series of Fe-doped Bi2(FexGa1-x)4O9 (x=0.1,0.2,0.3,0.4,0.5) ceramics were synthesized by solid-phase method with sintering process. The influences of Fe doping content on phase, morphology, dielectric properties are discussed. XRD results show that there is no second phase in Fe-doped Bi2(FexGa1-x)4O9 ceramics. The SEM analysis indicates the grain size of as-prepared doped samples are relatively uniform and estimated to be about 1–4μm. The permittivity of as-prepared doped samples increases and the dielectric loss decrease compared to pure Bi2Ga4O9 ceramics.

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Applied Mechanics and Materials (Volume 552)

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283-285

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https://doi.org/10.4028/www.scientific.net/AMM.552.283

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Online since:

June 2014

Authors:

Huan Huan Chen, Xiao Yan Zhang*, Xi Wei Qi, Zhao Jie Zhou, Gui Fang Sun

Keywords:

Bi₂Ga₄O₉ Ceramics, Dielectric Property, Fe Doping, Preparation

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