Shottky Contact Device Based on a Single WO₃ Nanowire for Ultraviolet Photodetector

Abstract:

To distinguish the ultraviolet (UV) photoresponse of Ohmic and Schottky contact devices, we have fabricated symmetrical and nonsymmetrical devices by standard lithography based on a single WO₃ nanowire. For the Ohmic contact device, the photocurrent can change from 100 nA to 300 nA. Even 200 s under UV illumination, nonsaturated photocurrent can be observed, and the fall time is more than 1000 s. But for the Schottky contact device, the rise and fall time are faster than that of Ohmic device. The barrier height of Schottky device can be easily controlled through the oxygen adsorption and desorption on the junction region, which can be served as a ‘‘gate’’ that effectively tunes the conductance of the device. Therefore, the Schottky barrier plays a very important role in the rapid-response of UV photodetector.

• Periodical: Applied Mechanics and Materials (Volumes 556-562)
• Pages: 2097-2100
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.556-562.2097
• Online since: May 2014
• Authors: Jun Hua Wan*, Kai Huang, Li Wan
• Keywords: Barrier Height, Ohmic, Photodetector, Schottky, Ultraviolet, WO₃

References

[1] S. J. Young, L. W. Ji, S. J. Chang, S. H. Liang, K. T. Lam, T. H. Fang, K. J. Chen, X. L. Du, and Q. K. Xue, Sens. Actuators, A 135 (2007) 529.

[2] E. Monroy, F. Omnes, and F. Calle, Semicond. Sci. Technol. 18 (2003) 33.

[3] C. K. Wang, S. J. Chang, Y. K. Su, C. S. Chang, Y. Z. Chiou, C. H. Kuo, T. K. Lin, T. K. Ko, and J. J. Tang, Mater. Sci. Eng., B 112 (2004) 25.

[4] S.V. Averine, P. I. Kuznetzov V.A. Zhitov, and N.V. Alkeev, Solid-State Electron. 52 (2008) 618.

DOI: 10.1016/j.sse.2007.10.037

[5] R. Calarco, M. Marso, T. Richter, A. I. Aykanat, R. Meijers, A. V. D. Hart, T. Stoica, H. Lu¨th, Nano Lett. 5 (2005) 981.

DOI: 10.1021/nl0500306

[6] H. Kind, H. Yan, B. Messer, M. Law, P. D. Yang, AdV. Mater. 14 (2002) 158.

[7] M. Law, H. Kind, F. Kim, B. Messer, P. Yang, Angew. Chem., Int. Ed. 41 (2002) 2405.

[8] S. Mathur, S. Barth, H. Shen, J. -C. Pyun, U. Werner, Small, 1 (2005) 713.

[9] J. S. Jie, W. J. Zhang, Y. Jiang, X. M. Meng, Y. Q. Li, and S. T. Lee, Nano Lett. 6 (2006) 1887.

[10] C. S. Lao, Y. Li, C. P. Wong, and Z. L. Wang, Nano Lett, 7 (2006) 1323.

[11] C. Sanrato, M. Odziemkowski, M. Ulmann and J. Augustynski, J. Am. Chem. Soc. 123 (2001) 10639.