Numerical Simulation of the Effection of Inlet Velocity in GaN Growth by MOCVD

Dong Sheng Peng; Zhi Gang Chen; Cong Cong Tan

doi:10.4028/www.scientific.net/AMM.556-562.4155

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 556-562Numerical Simulation of the Effection of Inlet...

Numerical Simulation of the Effection of Inlet Velocity in GaN Growth by MOCVD

Abstract:

A mathematical model for the growth of gallium nitride in a vertical impinging metalorganic chemical vapor deposition (MOCVD) reactor is developed. The dependence of the GaN film and the uniformity of the deposited layers on the inlet velocity is investigated to gain greater insight into the reactor performance and characteristics. Based on the simulation results, discussion is presented in this paper to offer the possibility of better control of the GaN film growth process and to ultimately lead to an optimization of the process.

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Periodical:

Applied Mechanics and Materials (Volumes 556-562)

Pages:

4155-4158

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.556-562.4155

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Online since:

May 2014

Authors:

Dong Sheng Peng*, Zhi Gang Chen, Cong Cong Tan

Keywords:

GaN, Inlet Velocity, MOCVD, Numerical Simulation

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