The Theory and Experimental Study on the Long-External Cavity Semiconductor Lasers

Chang Jian Qi; Tong Gang Zhao

doi:10.4028/www.scientific.net/AMM.571-572.990

Paper Titles

Studies on the Ontology-Based Composable Modeling Technology of Radar Countermeasure Test Simulation
p.969

The Design of Freeform Surface Fresnel Lens Used for LED Uniform Illumination
p.976

The Intelligent Desk Lamp Designed for Special Populations
p.980

The Study on Intelligent Insecticidal Lamp with LED
p.985

The Theory and Experimental Study on the Long-External Cavity Semiconductor Lasers
p.990

Theoretical Studies of Novel High Power Millimeter Generator Based on Vacuum Electron Devices
p.994

Study on Passivity-Based Control of TNPC PV Grid-Connected Inverter
p.1000

A Trusted QoS Architecture for Wireless Multimedia Sensor Networks
p.1009

Design of Circuit for Alcohol Measurements Using Three-Electrode Biosensor
p.1014

HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 571-572The Theory and Experimental Study on the...

The Theory and Experimental Study on the Long-External Cavity Semiconductor Lasers

Abstract:

Long-External Cavity Laser (L-ECL) is a kind of new and promising type laser because of its dynamic single mode performance. In this paper, firstly, the theory model of L-ECL is discussed; Secondly, the influence of coupling coefficient on the threshold gain of L-ECL is studied based on equivalent external cavity theory; Thirdly, utilizing the theory of equivalent cavity length, combined rate equations, the high frequency response characteristic of L-ECL is analyzed; Lastly, optical spectrums of L-ECL on different grating peak reflectivity are obtained by experiment.

You might also be interested in these eBooks

View Preview

Info:

Periodical:

Applied Mechanics and Materials (Volumes 571-572)

Pages:

990-993

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.571-572.990

Citation:

Cite this paper

Online since:

June 2014

Authors:

Chang Jian Qi*, Tong Gang Zhao

Keywords:

External Cavity Laser, Frequency Response, Rate Equation, Reflection Coefficient

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] Raptis L, Chatzilias G, et al. Design and experiments of an automatic switched optical network (ason) [A]. Optical Communication, 2001. ECOC '01. 27th European Conference on , Vol. 3，2001: 256～257.

DOI: 10.1109/ecoc.2001.989615

Google Scholar

[2] Zhao Tong-gang, Ren Jian-hua, Zhao Rong-hua, et al. Application and realization of all optical wavelength converter in automatical swictched optical networks[J]. Semiconductor Optoelectronics, 2000，vol. 23(5): 324～327 (in Chinese).

Google Scholar

[3] Qin Zi-xiong, Zeng Qing-ke, et al. Grating wavelength shifter with a broad-range tenability by using a beam of uniform strength[J]. Acta Optica Sinca, 2001，vol. 21(12): 1421～1423(in Chinese).

Google Scholar

[4] Ma Jun-shan, Geng Jian-xin. Wavelength conversion in a double-wavelength laser diode with fiber Bragg grating external cavity [J]. Journal of Optoelectronics. Laser, 2002, vol. 13(5): 453～455 (in Chinese).

Google Scholar

[5] Martin McCall. On the application of coupled mode theory for modeling fiber Bragg gratings [J]. Journal of Lightwave Technology, 2000， Vol. 18(2): 236～242.

DOI: 10.1109/50.822798

Google Scholar

[6] Kakiuchida H, Ohtsubo J. Characteristics of a semiconductor laser with external feedback [J]. IEEE J. Quantum Electron, 1994, Qe-30(9): 2087～(2097).

DOI: 10.1109/3.309866

Google Scholar

[7] M. yamada. Transverse and longitudinal mode control in semiconductor injection lasers [J]. IEEE J. Quantum Electron，1983, Qe-19（9）: 1365～1380.

DOI: 10.1109/jqe.1983.1072059

Google Scholar