Effect of Chemical Vapor Deposition Process Parameters on Graded SiC-SiO₂ Coating

Abstract:

The effect of the chemical vapor deposition (CVD) process parameters on the structure of graded SiC-SiO₂ coating was studied through thermodynamic computation. The addition of enough hydrogen into the carrier gas is necessary for the synthesis of the graded SiC-SiO₂ coating. Both high deposition temperature and low deposition temperature make the change of the composition of the coating abrupt with the change of the composition of CVD atmosphere, which is harmful to the process control of the coating. A low concentration of reactants is preferred according to the thermodynamic computation but the deposition rate is too low at a low concentration of reactants. When hydrogen is the carrier gas and the concentration of SiCl₄ is between 1 – 2 vol%, the graded SiC-SiO₂ coating with a suitably graded distribution of SiC and SiO₂ can be easily obtained through gradually changing the flow rate ratio of methane and water vapor at 1100 - 1200 °C.

• Periodical: Applied Mechanics and Materials (Volume 575)
• Pages: 134-137
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.575.134
• Online since: June 2014
• Authors: Zhi Qiang Fu*, Yan Li Yu, Wen Yue, Cheng Biao Wang, Chun He Tang
• Keywords: Chemical Vapor Deposition (CVD), Process Optimization, SiC-SiO₂ Coating, Thermodynamic Analysis

References

[1] Paccaud, A. Derre : J. Phys. IV France. Vol. 11 (2001), pp.1095-1101.

[2] C. Tang, J. Guan. J Nucl. Mater: Vol. 224 (1995) pp.103-108.

[3] W. Zhang, H. Chen, Z. Shen, et al: New Carbon Mater. Vol. 13 (1998) pp.11-15.

[4] M. Balat, G. Flamant, G. Male, et al: J. Mater. Sci. Vol. 27(1992) pp.697-703.

[5] K. L. Luthra: J. Amer. Ceram. Soc. Vol. 74 (1991) pp.1095-1103.

[6] T. Narushima, T. Goto, Y. Iguchi, et al: J. Amer. Ceram. Soc. Vol. 74 (1991) pp.2583-2586.

[7] Z. Q. Fu, C. B. Wang, C. H. Tang, et al : Nucl. Engin. Des. Vol. 265 (2013) pp.867-871.

[8] L. F. Cheng, Y. Xu, L. Zhang, et al: Carbon Vol. 38 (2000) pp.1493-1498.

[9] Q. Guo, J. Song, L. Liu, et al: Carbon Vol. 37 (1999) pp.149-151.

[10] W. Kowbel, J. C. Withers, P. O. Pansone: Carbon Vol. 33 (1995) pp.415-426.

[11] W. P. Hofffman, H. T. Phan, A. Groszek: Carbon Vol. 33 (1995) pp.509-524.

[12] Y. C. Zhu, S. Ohtani, Y. Sato, et al: Carbon Vol. 37 (1999) pp.1417-1423.