Growth Dynamics of Single Void during Czochralski Silicon Crystal Growth Using Phase-Field Modeling

Jin Wang; Xiao Jun Guan; Xiang Yu Zhang; Qing Kai Zeng

doi:10.4028/www.scientific.net/AMM.576.3

Paper Titles

Preface and Committees

Growth Dynamics of Single Void during Czochralski Silicon Crystal Growth Using Phase-Field Modeling
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Electronic and Optical Properties of Sn-Doped Zno with and without O Vacancy
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Enhanced Flux Pinning in La_1.84Sr_0.16CuO₄ Thin Film with the Ferroelectric Polarization Effect of BiFeO₃
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Controllable Synthesis of Monodisperse Metal Oxide Nanostructures via a Solvothermal Route and Their Catalytic Properties
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Preparation and Optical Properties of One-Dimensional Ag/SiOx Photonic Crystal
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Study on Fabrication and Properties of In Situ Si and Al₂O₃ Particulate Reinforced Composites
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The Synthesis and Application of the NaCl-KCl-K₂HfCl₆ Electrolyte
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The Study on Photocatalytic Degradation of Methyl Orange Using SrFe_0.5Co_0.5O_3-δ
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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vol. 576Growth Dynamics of Single Void during Czochralski...

Growth Dynamics of Single Void during Czochralski Silicon Crystal Growth Using Phase-Field Modeling

Abstract:

To investigate the growth dynamics of the single void during Czochralski silicon growth as well as capture the basic features of the diffusion-controlled dynamic mechanisms, a phase field method has been developed. The free energy of the system involving the chemical free energy and the gradient energy is presented. Numerical tests were performed to examine the capability of this model, and the results show that: the void grows due to the absorption of vacancies in the matrix, which essentially reduces the free energy of the system; with the growth of the void, there forms vacancy concentration gradient towards the void in the matrix; the increase of initial vacancy concentration contributes to a larger void size and growth rate.