Design and Simulation of S-Band Low Noise Amplifier Based on ATF-54143

Hai Peng Wang; Shu Hui Yang; Meng Lu Feng; Yin Chao Chen

doi:10.4028/www.scientific.net/AMM.577.615

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vol. 577Design and Simulation of S-Band Low Noise...

Design and Simulation of S-Band Low Noise Amplifier Based on ATF-54143

Abstract:

This design used a low noise enhanced high electron mobility transistor ATF54143 and Agilent's ADS simulation software to achieve the good performance of operating frequency at 2.45GHz, noise figure (NF) is less than 0.8dB, band gain (S₂₁) is greater than 15dB, input voltage standing-wave ratio (VSWR1) is less than 1.4dB, output voltage standing-wave ratio (VSWR2) is less than 1.6dB.

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Periodical:

Applied Mechanics and Materials (Volume 577)

Pages:

615-619

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.577.615

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Online since:

July 2014

Authors:

Hai Peng Wang, Shu Hui Yang*, Meng Lu Feng, Yin Chao Chen

Keywords:

Band Gain, Low-Noise Amplifier (LNA), Noise Figure (NF), Voltage Standing-Wave Ratio (VSWR)

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References

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