Anti-ESD Improvement of a Power nLDMOS with a Perpendicular Super-Junction Construction in the Drain Side

Abstract:

An HV 60-V nLDMOS by adding a perpendicular-type super-junction (SJ) structure and changing pillar widths in the drain side will be investigated in this paper. In order to verify some physical parameters influences on the ESD capability, a TLP testing equipment will be used for obtaining the secondary breakdown current (I_t2) in different DUTs. In I_t2 values comparison, an SJ-nLDMOS is higher than that of a traditional nLDMOS, and as the pillar width increased the equivalent HBM value can be up to 4.799-kV. Finally, from the relationship between the SJ-nLDMOS and Ref. DUT, it can be found that an SJ structure is good for ESD discharge, as compared with the Ref. group can be increasing by 25%. In addition, the V_t1 and V_h value of various kinds of SJ-nLDMOS will decline than the traditional nLDMOS.

• Periodical: Applied Mechanics and Materials (Volume 595)
• Pages: 195-200
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.595.195
• Online since: July 2014
• Authors: Shen Li Chen*, Yi Sheng Lai
• Keywords: Electrostatic Discharge (ESD), High-Voltage (HV), Holding Voltage (V_h), Low-Voltage (LV), Secondary Breakdown Current (I_t2), Super-Junction, Trigger Voltage (V_t1)

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