A Method of Fabricating T Shape Nanochannel on Silicon Substrate

Zone Ching Lin; Hao Yuan Jheng; Hao Yang Ding

doi:10.4028/www.scientific.net/AMM.598.18

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vol. 598A Method of Fabricating T Shape Nanochannel on...

A Method of Fabricating T Shape Nanochannel on Silicon Substrate

Abstract:

The paper innovatively proposes using atomic force microscopy (AFM) and the concept of specific down force energy (SDFE) to establish a method for fabricating T shape nanochannel grooves on silicon (Si) substrate. Using the single-pass multi-layer cutting method of nanochannel groove using AFM proposed by the paper, a nanochannel looked like T shape is fabricated. For fabricating T shape nanochannel, it is set that cutting is firstly carried out for one pass on each cutting layer at a fixed down force. Then the probe carries out cutting for repeated passes. Using this cutting way by AFM and SDFE theory, the cutting depth and width of each pass can be predicted. The results of simulation and experiment of fabricating method for T shape nanochannel is further compared.

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Periodical:

Applied Mechanics and Materials (Volume 598)

Pages:

18-22

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.598.18

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Online since:

July 2014

Authors:

Zone Ching Lin*, Hao Yuan Jheng, Hao Yang Ding

Keywords:

Atomic Force Microscopy (AFM), Nanochannel, Silicon Substrate, Specific down Force Energy (SDFE)

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