The Range Distribution of Yb Ions Implanted in 6H Silicon Carbide

Xi Feng Qin; Gui Jie Ma; Shu Hua Shi; Feng Xiang Wang

doi:10.4028/www.scientific.net/AMM.599-601.160

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 599-601The Range Distribution of Yb Ions Implanted in 6H...

The Range Distribution of Yb Ions Implanted in 6H Silicon Carbide

Abstract:

The mean projected ranges and range straggling for energetic 200 – 500 keV Yb ions implanted in 6H-SiC were measured by means of Rutherford backscattering followed by spectrum analysis. The measured values are compared with Monte Carlo code (SRIM2012) calculations. It has been found that the measured values of the mean projected range are good agreement with the SRIM calculated values; for the range straggling , the difference between the experiment data and the calculated results is much higher than that of .

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Periodical:

Applied Mechanics and Materials (Volumes 599-601)

Pages:

160-163

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.599-601.160

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Online since:

August 2014

Authors:

Xi Feng Qin*, Gui Jie Ma, Shu Hua Shi, Feng Xiang Wang

Keywords:

6H-SiC, Range Distribution, Rutherford Backscattering Technique, Yb Ion Implantation

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