Simulation of the Effecion of Inlet Flow on Precursor Distribution

Dong Sheng Peng; Zhi Gang Chen; Cong Cong Tan

doi:10.4028/www.scientific.net/AMM.602-605.3092

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 602-605Simulation of the Effecion of Inlet Flow on...

Simulation of the Effecion of Inlet Flow on Precursor Distribution

Abstract:

A mathematical model for the growth of gallium nitride in a vertical impinging metalorganic chemical vapor deposition (MOCVD) reactor is developed. The dependence of the GaN film and the uniformity of the deposited layers on the inlet flow is investigated. Based on the simulation results, the uniformity of the precursor distribution is better, with the increasment of the inlet flow, so the quality of GaN film is superior.

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Periodical:

Applied Mechanics and Materials (Volumes 602-605)

Pages:

3092-3095

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.602-605.3092

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Online since:

August 2014

Authors:

Dong Sheng Peng*, Zhi Gang Chen, Cong Cong Tan

Keywords:

GaN, Inlet Flow, Precursor, Simulation

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* - Corresponding Author

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