A Study on the Electrical Properties of Gan-Based Alpha Particle Detector

Abstract:

Pin structure GaN-based alpha particle detector with epitaxial growth on c-plane sapphire substrate through metal organic chemical vapor deposition (MOCVD) method, uses electron beam evaporation and photoetching machine to produce the ohmic contact electrodes of device. The electrical properties of device which were tested by I-V and C-V show that the device’s reverse leakage current is 9.9μA at 100V reverse bias voltage is at; and the detector’s junction capacitance is 19pF at 20V reverse bias voltage.

• Periodical: Applied Mechanics and Materials (Volume 620)
• Pages: 457-460
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.620.457
• Online since: August 2014
• Authors: Zhi Fu Zhu, Xin Cun Peng, Ji Jun Zou*, Lin Feng, Ren Bo Wang
• Keywords: Alpha Particle, Detector, GaN, PiN

References

[1] Knoll G F. Radiation detection and measurement[M]. John Wiley & Sons, (2010).

[2] Strite S, Morkoç H. GaN, AlN, and InN: a review[J]. Journal of Vacuum Science & Technology B, 1992, 10(4): 1237-1266.

[3] Ryu H Y, Ha K H, Chae J H, et al. Measurement of junction temperature in GaN-based laser diodes using voltage-temperature characteristics[J]. Applied Physics Letters, 2005, 87(9): 093506.

DOI: 10.1063/1.2037201

[4] Mishra U K, Parikh P, Wu Y F. AlGaN/GaN HEMTs-an overview of device operation and applications[J]. PROCEEDINGS-IEEE, 2002, 90(6): 1022-1031.

DOI: 10.1109/jproc.2002.1021567

[5] Limb J B, Yoo D, Ryou J H, et al. GaN ultraviolet avalanche photodiodes with optical gain greater than 1000 grown on GaN substrates by metal-organic chemical vapor deposition[J]. Applied physics letters, 2006, 89(1): 011112.

DOI: 10.1063/1.2219390

[6] Vaitkus J, Cunningham W, Gaubas E, et al. Semi-insulating GaN and its evaluation for α particle detection[J]. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2003, 509(1): 60-64.

DOI: 10.1016/s0168-9002(03)01550-x

[7] J. Vaitkus, W. Cunningham, E. Gaubas, M. Rahman, S. Sakai, K.M. Smith, T. Wang Nucl. Instr. and Meth., A 509 (2003), p.60.

[8] A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, et al. Α particle detection with GaN Schottky diodes. Journal of Applied Physics, 2009, Vol. 106: 103708.

[9] Su Dan, ZhANG Guo-guang, LU Min, et al. Study on Performance of GaN Radiation Detector [J]. Atomic Energy Science and Technology, 2013, 47(5): 884-887.