Design of an Output-Capacitorless LDO Regulator with Adaptive Power Transistors

Shang Sheng Chi; Wei Hu; Yu Sen Xu; Ming Hui Fan

doi:10.4028/www.scientific.net/AMM.631-632.322

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 631-632Design of an Output-Capacitorless LDO Regulator...

Design of an Output-Capacitorless LDO Regulator with Adaptive Power Transistors

Abstract:

This paper presents a bandgap reference and an output-capacitorless LDO regulator with adaptive power transistors. The bandgap reference consists of a current reference circuit, a bipolar transistor and proportional-to-absolute-temperature (PTAT) voltage generators. The proposed LDO improves load transient and light load efficiency by permitting the regulator to transform itself between 2-stage and 3-stage topologies, depending on the load current condition. Cadence simulation with SMIC 0.18 μm process shows that the bandgap reference generates a reference voltage 569 mV and the quiescent current is only 0.23 μA, the proposed LDO generates an output voltage 1 V, the quiescent current is 0.88 μA (including bandgap reference) at no-load condition, the undershoot /overshoot voltage is 187 mV/152 mV and the settling time is 5 μs as load current suddenly changes from 0 to 100 mA, or vice versa.

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Periodical:

Applied Mechanics and Materials (Volumes 631-632)

Pages:

322-326

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.631-632.322

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Online since:

September 2014

Authors:

Shang Sheng Chi, Wei Hu*, Yu Sen Xu, Ming Hui Fan

Keywords:

Bandgap Reference, Low Quiescent LDO, Out-Put Capacitorless LDO

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References

[1] Milliken R. J. , Silva-Martinez J. and Sanchez-Sinencio E.: IEEE Transaction of Circuits and Systems: I-Regular Papers, Vol. 54(2007), pp.1879-1890.

DOI: 10.1109/tcsi.2007.902615

Google Scholar

[2] Chong S. S., Chan P. K.: IEEE Transaction of Circuits and Systems: I-Regular Papers, Vol. 60(2013), pp.1072-1081.

Google Scholar

[3] Yusen Xu, Wei Hu, et al . Design of A Novel All-CMOS Low Power Voltage Reference Circuit (IEEE Xplore Digital Library, China 2013).

DOI: 10.1109/asicon.2013.6812028

Google Scholar

[4] Yuji Osaki, Tetsuya Hirose, Nobutaka Kuroki, et al: IEEE Journal of Solid-State Circuits, Vol. 48(2013), pp.1530-1538.

Google Scholar

[5] K.N. Leung, and K. L Mak,: IEEE Journal of Solid-State Circuits, Vol. 45(2010), pp.2466-2476.

Google Scholar

[6] Esteves J., Pereira J. , Paisana J. , et al.: Microelectronics Journal, Vol. 44(2013), p.94–102.

Google Scholar

[7] Zhan C. C., Ki W. -H. : IEEE Transaction on Circuits and Systems-I: Regular Papers, Vol. 59(2012), pp.1119-1131.

Google Scholar

[8] Chen C. M., Hung C. C. A fast self-reacting capacitor-less low-dropout regulator (IEEE Xplore Digital Library, Finland 2011).

DOI: 10.1109/esscirc.2011.6044985

Google Scholar

[9] Hazucha P. , Karnik T., Bloechel B. A. , et al: IEEE Journal of Solid-State Circuits, Vol. 40(2005), pp.933-940.

DOI: 10.1109/jssc.2004.842831

Google Scholar