The Red Electroluminescence of Iridium Complex at Different Concentrations and Host Materials

Wen Guan Zhang; Lian Qin; Sheng Min Zhao

doi:10.4028/www.scientific.net/AMM.633-634.94

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 633-634The Red Electroluminescence of Iridium Complex at...

The Red Electroluminescence of Iridium Complex at Different Concentrations and Host Materials

Abstract:

Six devices based on tris [2-(benzo [b] thiophen-2-yl) pyridinato-C³,N] iridium Ir (btpy)₃ at the different concentration (0.5, 2, 8 and 12 wt. %) and in three host materials (PVK blending with PBD, PVK and CBP) were fabricated by spin-casting technique. The PL emission of Ir (btpy)₃in solid film peaked at 594 nm. HOMO and LUMO energy levels were-5.08 and-2.67 eV. The EL peaks kept constant at 600 and 649 nm, and Commission International de L′Eclairage (CIE) coordinates were stable at (0.63, 0.36). With the increasing of doping concentration luminances were enhanced at the given voltage. Devices of host PVK blending with PBD exhibited much higher luminance than device in host PVK or CBP at the same concentration of 8 %. All devices exhibited strong red electrophosphorescence. The transport of electron and hole was balanced and energy transfer from the host to the guest complex was efficient. The characteristics of devices demonstrated that Ir (btpy)₃ was an excellent red emitter suitable for OLEDs.

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Periodical:

Applied Mechanics and Materials (Volumes 633-634)

Pages:

94-97

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.633-634.94

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Online since:

September 2014

Authors:

Wen Guan Zhang*, Lian Qin, Sheng Min Zhao

Keywords:

Different Host, Doping, Electroluminescent Device, Iridium Complex, Red Emission

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* - Corresponding Author

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