Study on the Driving Circuit of Carbon Nanotube Field Emission Display Based on Luminance Control

Abstract:

Carbon nanotube field emission display (CNT-FED) is one of the most significant subjects due to its unique qualities and perfect performance. But there are still some problems in FED, for example, the modulation of each pixel unit of field emission display device is discrete, and the traditional voltage pulse-width modulation driving mode cannot solve luminance non-uniformity and non-linearity of FED. So a novel driving circuit based on cathode current source is proposed. The current driving circuit can be fabricated on Si substrate in advance, and then carbon nanotube is grown at room temperature, carbon nanotube and constant current source circuits are integrated on the same Si substrate. Current source circuit and cathode emission part are integrated together, which not only can solve the FED luminance problem, but also can meet FED thin design.

• Periodical: Applied Mechanics and Materials (Volumes 635-637)
• Pages: 1109-1113
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.635-637.1109
• Online since: September 2014
• Authors: Qiao Ping Liu*, Yan Ning Yang, Wei Xia Li
• Keywords: CNT-FED, Current Driving Circuit, Luminance Control

References

[1] Shigeo Itoh, Mitsuru Tanaka, Takeshi Tonegawa: Journal of Vacuum Science &Technology B: Microelectronics and Nanometer Structures Vol. 22 (2004), p.1362.

[2] Wei Lei, Shuyi Ding , Xiaobing Zhang, Baoping Wang: Vacuum Electronics Vol. 6 (2012), p.6 In Chinese.

[3] Lee N S, Chung D S, Han I T, et al: Diamond & Related Materials Vol. 10 (2001), p.265.

[4] Mingxuan Cao, Changkun Dong: Vacuum Vol. 50 (2013), p.56 In Chinese.

[5] Jinyang Lin, Yongai Zhang, Zunxian Yang, Tailiang Guo: Chinese Journal of Vacuum Science and Technology Vol. 34 (2014), p.96 In Chinese.

[6] Jianmin Yao, Binle Huang, Tailiang Guo: Optoelectronics Letters Vol. 5 (2009), p.333 In Chinese.

[7] Abileah A. Information Display Vol. 24 (2008), p.31.

[8] Yangcheng Huang, XunLi Xia, Bo Chen, et al: Semiconductor Optoelectronics Vol. 28 (2007), p.640 In Chinese.

[9] Yongai Zhang, Jinyang Lin, Chaoxing Wu, Tailiang Guo: Journal of Optoelectronics Laser Vol. 22 (2011), p.673 In Chinese.

[10] Xinchao Duan, Xiaoping Wang, Lijun Wang, Longyang Wang, Lei Zhang: Materials Review Vol. 22 (2008), p.8 In Chinese.

[11] A. A. Talin, K. A. dean, J . E. Jaskie: Solid State Electronics Vol. 45 (2001), p.963.

[12] Shoucai Yuan, Yamei Liu: Journal of Gannan Normal University Vol. 3 (2013), p.10 In Chinese.

[13] Jie Zhang, Yongai Zhang, Chaoxing Wu, Qiaozhi Tang, Zhen Jia, Tailiang Guo: Optoelectronic Technology Vol. 30 (2010), p.179 In Chinese.

[14] Kim J M, Choi W B, Lee N S, et al: Diamond & Related Materials Vol. 9 (2000), p.1184.

[15] Jicai Deng, Binglin Zhang, Ning Yao: Semiconductor Optoelectronics Vol. 27 (2006), p.95 In Chinese.